This is final year electronics project report on "Simulation of double gate tunnel field effect transistor (FET)". Tunnel FETs, which are gated p-i-n diodes whose on-current arises from band-to-band tunneling, are attractive new devices for... To know more on this Project please visit our Site http://www.final-yearproject.com/

read more: Simulation of Double Gate Tunnel Field Effect Transistor (FET)